In a 3nm GAA (Gate-All-Around) process, which parasitic effect becomes the most significant bottleneck for high-speed signal integrity compared to FinFET?
Moving to 3nm and 2nm Nanosheet/GAA structures increases the gate's surface area around the channel, which improves drive current but significantly increases parasitic gate-to-drain ($C_{gd}$) and gate-to-source ($C_{gs}$) capacitance, impacting the $RC$ delay of the path.
