As we transition from 5nm FinFET to 3nm Gate-All-Around (GAA) Nanosheet technology, which of the following is the primary physical advantage that improves short-channel control?
Explanation: In FinFETs, the gate covers three sides of the channel. In GAA (Nanosheet), the gate completely wraps around the channel. This "all-around" contact provides maximum electrostatic control, significantly reducing sub-threshold leakage and the Short Channel Effect (SCE), which is critical at 3nm and below.
